FQA47P06SMD semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk
v dss drain ? source voltage i d continuous drain current (v gs = 0 , t case = 25c) i d continuous drain current (v gs = 0 , t case = 100c) i dm pulsed drain current 1 p d power dissipation @ t case = 25c linear derating factor e as single pulse avalanche energy 2 i ar avalanche current 1 e ar repetitive avalanche energy 1 dv/dt peak diode recovery 3 t j , t stg operating and storage temperature range t l lead temperature 1.6mm (0.63?) from case for 10 sec. mechanical data dimensions in mm (inches) p?channel power mosfet absolute maximum ratings (t case = 25c unless otherwise stated) features hermetically sealed smd1 ceramic package simple drive requirements screening options available smd1 (to276-ab) ceramic package pad 1 ? source pad 2 ? drain pad 3 ? gate notes 1) repetitive rating ? pulse width limited by maximum junction temperature. 2) @ v dd = ?25v , l = 0.315mh , r g = 25 ? , i as = ?55a , starting t j = 25c 3) @ i sd ?47a , di/dt ?300a/ s , v dd bv dss , t j 25c v dss ?60v i d(cont) ?55a r ds(on) 0.026 ? ? ?60v ?55a ?38.9a ?220a 125w 1.2w/c 820mj ?55a 21.4mj ?7.0v/ns ?55 to +175c 300c document number 5683 issue 1 semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omi ssions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders.
parameter test conditions min. typ. max. unit drain ? source breakdown voltage temperature coefficient of breakdown voltage static drain ? source on?state resistance 1 gate threshold voltage forward transconductance 1 zero gate voltage drain current (v gs = 0) forward gate ? source leakage reverse gate ? source leakage input capacitance output capacitance reverse transfer capacitance total gate charge gate ? source charge gate ? drain (?miller?) charge turn?on delay time rise time turn?off delay time fall time continuous source current pulse source current 2 diode forward voltage reverse recovery time reverse recovery charge FQA47P06SMD document number 5683 issue 1 semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk ?60 ?0.06 0.021 0.026 ?2 ?4 22 ?1 ?10 ?100 100 2800 1300 320 84 110 18 44 50 110 450 910 100 210 195 400 ?55a ?220a ?4.0 130 0.55 v gs = 0 i d = ?250 a reference to 25c i d = ?250 a v gs = ?10v i d = ?27.5a v ds = v gs i d = ?250 a v ds = ?30v i ds = ?27.5a v ds = ?60v v ds = ?48v t c = 125c v gs = ?25v v gs = 25v v gs = 0 v ds = ? 25v f = 1mhz v gs = ?10v i d = ?47a v ds = ?48v v dd = ?30v i d = ?23.5a r g = 25 ? i s = ?55a v gs = 0 v gs = 0 i f = ?47a di/dt = 100a/ s electrical characteristics (t case = 25c unless otherwise stated) v v/c ? v s a na pf nc ns a v ns c bv dss ? bv dss ? t j r ds(on) v gs(th) g fs i dss i gss i gss c iss c oss c rss q g q gs q gd t d(on) t r t d(off) t f i s i sm v sd t rr q rr static electrical ratings notes 1) pulse test: pulse width 300 s, ? 2% 2) repetitive rating ? pulse width limited by maximum junction temperature. dynamic characteristics source ? drain diode characteristics semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omi ssions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders.
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